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2SA1416S PNP transistors(BJT) -120V -1A 120MHz 140~280 -200mV/-0.2V SOT-89/PCP marking ABS high breakdown voltage/highspeed switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-120V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−100V
集电极连续输出电流IC
Collector Current(IC)
-1A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
140~280
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−200mV/-0.2V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsSilicon PNP Epitaxial Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Very small size making it easy to provide highdensity, small-sized hybrid ICs.
描述与应用硅PNP外延型的 特点  ·采用FBET,MBIT过程。  ·高击穿电压和大电流的能力。  ·快速开关时间。  ·体积非常小,因此很容易提供高密度,小尺寸的混合集成电路。
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