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2SA1586-Y PNP transistors(BJT) -50V -150mA/-0.15A 80MHz 120~240 -100mV/-0.1V SOT-323/SC-70 marking SY high HFE
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流IC Collector Current(IC) | −150mA/-0.15A |
截止频率fT Transtion Frequency(fT) | 80MHz |
直流电流增益hFE DC Current Gain(hFE) | 120~240 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -100mV/-0.1V |
耗散功率Pc PoWer Dissipation | 100mW/0.1W |
Description & Applications | silicon PNP epitaxial type high voltage and high current; excellent hFE linearity; high hFE; low noise; complement to 2sc4116 |
描述与应用 | 硅PNP外延型 高电压和高电流; HFE出色的线性度; HFE高; 噪音低; 补充2SC4116 |