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2SA1603A PNP transistors(BJT) -60V -150mA/-0.15A 200MHz 180~390 -300mV/-0.3V SOT-323/SC-70 marking TR low-frequency amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−150mA/-0.15A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & ApplicationsFOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application.
描述与应用对于低频放大应用 硅PNP外延型 特点 ●小集电极到发射极饱和电压。                     VCE(sat)=-0.3V最大 ●直流前锋出色的线性度获得。 ●超小型封装,便于安装 应用 对于混合集成电路,小型机低频电压放大应用
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