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2SA1648-Z-E1 PNP transistors（BJT） -100V -5A 90MHz 200~400 -300mV/-0.3V TO-252/DPAK marking A1648 highspeed switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −100V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流IC Collector Current(IC) | -5A |
| 截止频率fT Transtion Frequency(fT) | 90MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 18W |
| Description & Applications | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING FEATURES • Available for high-current control in small dimension • Z type is a lead processed product and is deal for mounting a hybrid IC. • Low collector saturation voltage: VCE(sat) = −0.3 V MAX. (@IC = −3 A) • Fast switching speed: tf = 0.4 µs MAX. (@IC = −3 A) • High DC current gain and excellent linearity |
| 描述与应用 | PNP硅外延晶体管高速开关 特点 •可用于高电流控制在小尺寸 Z型是一种无铅的加工产品，是用于安装一处理 混合IC。 •低集电极饱和电压： VCE（sat）=-0.3 V MAX。 （@ IC=-3 A） •开关速度快： TF=0.4μs最大。 （@ IC=-3 A） •高直流电流增益和良好的线性度 |
