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2SA1682 PNP transistors（BJT） -300V -50mA 70MHz 100~200 -1000mV/-1V SOT-23/CP marking CS4 high breakdown voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流IC Collector Current(IC) | -50mA |
| 截止频率fT Transtion Frequency(fT) | 70MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率Pc PoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR high breakdown voltage； excellent DC current gain ratio |
| 描述与应用 | PNP硅平面高压晶体管 击穿电压高; 卓越的DC电流增益比 |
