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2SA1682 PNP transistors(BJT) -300V -50mA 70MHz 100~200 -1000mV/-1V SOT-23/CP marking CS4 high breakdown voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-300V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−300V
集电极连续输出电流IC
Collector Current(IC)
-50mA
截止频率fT
Transtion Frequency(fT)
70MHz
直流电流增益hFE
DC Current Gain(hFE)
100~200
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1000mV/-1V
耗散功率Pc
PoWer Dissipation
250mW/0.25W
Description & ApplicationsPNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR high breakdown voltage; excellent DC current gain ratio
描述与应用PNP硅平面高压晶体管 击穿电压高; 卓越的DC电流增益比
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