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2SA1700E PNP transistors（BJT） -400V -200mA/-0.2A 70MHz 100~200 -800mV/-0.8V TO-252/DPAK marking A1700 high voltage driver
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -400V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -400V |
| 集电极连续输出电流IC Collector Current(IC) | −200mA/-0.2A |
| 截止频率fT Transtion Frequency(fT) | 70MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −800mV/-0.8V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | PNP epitaxial planat silicon transistor High-voltage driver applications high breakdown voltage； adoption of MBIT process； excellent hFE linearity |
| 描述与应用 | PNP的外延planat硅晶体管高电压驱动器应用程序 击穿电压高; 通过MBIT过程的; 出色的放大线性度 |
