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2SA1734 PNP transistors(BJT) -40V -1.2A 100MHz 120~400 -500mV/-0.5V SOT-89/SC-62 marking LB power amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −30V |
集电极连续输出电流IC Collector Current(IC) | -1.2A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 120~400 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc PoWer Dissipation | 500mW/0.5W |
Description & Applications | transistor silicon PNP epitaxial type power amplifier application; power switching application; low saturation voltage; high speed switching time; complementary to 2sc4539 |
描述与应用 | 晶体管硅外延型PNP 功率放大器中的应用; 电源开关应用; 低饱和电压; 高速开关时间; 互补2sc4539 |