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2SA1745 PNP transistors（BJT） -20V -500mA/-0.5A 300MHz 200~400 -200mV/-0.2V SOT-323/MCP marking ES6 Low-Frequency General-Purpose Amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −200mV/-0.2V |
| 耗散功率Pc PoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP/NPN Epitaxial planar silicon transistor Low frequency general purpose Amp Applications low collector-to-emitter saturation voltage； complementary to 2SA1745 |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 低频通用 放大器应用 低集电极 - 发射极饱和电压; 互补2SA1745 |
