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2SA1745 PNP transistors(BJT) -20V -500mA/-0.5A 300MHz 200~400 -200mV/-0.2V SOT-323/MCP marking ES6 Low-Frequency General-Purpose Amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−15V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
300MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−200mV/-0.2V
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & ApplicationsPNP/NPN Epitaxial planar silicon transistor Low frequency general purpose Amp Applications low collector-to-emitter saturation voltage; complementary to 2SA1745
描述与应用PNP/ NPN外延平面硅晶体管 低频通用 放大器应用 低集电极 - 发射极饱和电压; 互补2SA1745
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