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2SA1745 PNP transistors(BJT) -20V -500mA/-0.5A 300MHz 300~600 -200mV/-0.2V SOT-323/MCP marking ES7 Low-Frequency General-Purpose Amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −15V |
集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
截止频率fT Transtion Frequency(fT) | 300MHz |
直流电流增益hFE DC Current Gain(hFE) | 300~600 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −200mV/-0.2V |
耗散功率Pc PoWer Dissipation | 150mW/0.15W |
Description & Applications | PNP/NPN Epitaxial planar silicon transistor Low frequency general purpose Amp Applications low collector-to-emitter saturation voltage; complementary to 2SA1745 |
描述与应用 | PNP/ NPN外延平面硅晶体管 低频通用 放大器应用 低集电极 - 发射极饱和电压; 互补2SA1745 |