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2SA1764 PNP transistors(BJT) -15V -200mA/-0.2A 1GHz 50~140 -70mV SOT-23/CP marking FS highspeed switch
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −15V |
集电极连续输出电流IC Collector Current(IC) | −200mA/-0.2A |
截止频率fT Transtion Frequency(fT) | 1GHz |
直流电流增益hFE DC Current Gain(hFE) | 50~140 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -70mV |
耗散功率Pc PoWer Dissipation | 200mW/0.2W |
Description & Applications | PNP epitaxial planar silicon transistor High speed switching applications Features fast switching speed; low collector saturation voltage; high gain-bandwidth product; small collector capacitance; complementary to 2sc4453 |
描述与应用 | PNP外延平面硅晶体管 高速开关应用 特点 开关速度快; 集电极饱和电压低; 高增益带宽积; 小型集热电容; 互补2sc4453 |