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2SA1862TLP PNP transistors（BJT） -400V -2A 18MHz 82~180 -300mV/-0.3V TO-252/DPAK marking A1862 high breakdown voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -400V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -400V |
| 集电极连续输出电流IC Collector Current(IC) | -2A |
| 截止频率fT Transtion Frequency(fT) | 18MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 82~180 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | High-voltage switching transistor high breakdown voltage； low saturation voltage； high switching speed |
| 描述与应用 | 高压开关晶体管 击穿电压高; 低饱和电压; 高开关速度 |
