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2SA2026 PNP transistors（BJT） -300V -100mA/-0.1A 40MHz 50~305 -500mV/-0.5V SOT-89/SC-62 marking 4G Low-Frequency General-Purpose Amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | 40MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~305 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP Silicon epitaxial planar type For low frequency amplifier application Feature Small collector to emitter saturation voltage Super mini package for easy mounting Applications For hybrid Ic, small type machine low frequency voltage amplifier application |
| 描述与应用 | PNP硅外延平面型 对于低频放大器中的应用 特点 小集电极到发射极饱和电压 易于安装的超小型封装 应用 对于混合IC，小型机低频电压放大器的应用 |
