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2SA2029 PNP transistors（BJT） -60V -150mA/-0.15A 140MHz 180~390 -500mV/-0.5V sot-723/VMT3 marking FR
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−50V |
| 集电极连续输出电流IC Collector Current(IC) |
−150mA/-0.15A |
| 截止频率fT Transtion Frequency(fT) |
140MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
180~390 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage |
−500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation |
150mW/0.15W |
| Description & Applications | PNP Silicon epitaxial planar type General purpose transistor Features Excellent hFE linearity Complements the 2SC5658 |
| 描述与应用 | PNP硅外延平面型 通用晶体管 特点 优秀HFE线性 补充2SC5658 |
