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2SA20840QL PNP transistors(BJT) -300V -70mA 50MHz 60~150 -600mV/-0.6V SOT-23/SC-59 marking 7NQ amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -300V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −300V |
集电极连续输出电流IC Collector Current(IC) | -70mA |
截止频率fT Transtion Frequency(fT) | 50MHz |
直流电流增益hFE DC Current Gain(hFE) | 60~150 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −600mV/-0.6V |
耗散功率Pc PoWer Dissipation | 200mW/0.2W |
Description & Applications | PNP Silicon epitaxial planar type For general amplification Features • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
描述与应用 | PNP硅外延平面型 对于一般的放大 特点 •高正向电流传输比HFE •迷你型包装,使瘦身带包装盒包装的设备和通过自动插入。 |