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2SA812 PNP transistors(BJT) -60V -100mA/-0.1A 180MHz 200~400 -300mV/-0.3V SOT-23/SC-59 marking M6 high DC current gain

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
180MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & Applications PNP Silicon epitaxial planar type Features Complementary to 2SC1623 High DC Current Gain High Voltage
描述与应用 PNP硅外延平面型 特点 互补型2SC1623 高DC电流增益 高电压
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