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2SB1119T-TD-E PNP transistors(BJT) -25V -1A 180MHz 200~400 -700mV/-0.7V SOT-89/PCP marking BBT LFamplifier/Electronic governor

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−25V
集电极连续输出电流IC
Collector Current(IC)
-1A
截止频率fT
Transtion Frequency(fT)
180MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−700mV/-0.7V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP Silicon epitaxial planar transistor LF Amp,Electronic governor application Features Very small size making it easy to provide highdensity, small-sized hybrid IC’s.
描述与应用PNP硅外延平面晶体管 LF放大器,电子调速器应用 特点 体积非常小,因此很容易提供高密度,小型混合IC。
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