2SB1132L PNP transistors（BJT） -40V -1A 150MHz 82~390 -500mV/-0.5V SOT-89/SC-62 marking B1132L|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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2SB1132L PNP transistors（BJT） -40V -1A 150MHz 82~390 -500mV/-0.5V SOT-89/SC-62 marking B1132L

Model：2SB1132L
Mark / screen / code / typing：B1132L
Manufacturer：
Date Code：06+NOPB
Package：SOT-89/SC-62
Standard Package：1000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	-40V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	−32V
集电极连续输出电流IC Collector Current(IC)	-1A
截止频率fT Transtion Frequency(fT)	150MHz
直流电流增益hFE DC Current Gain(hFE)	82~390
管压降VCE（sat） Collector-Emitter SaturationVoltage	−500mV/-0.5V
耗散功率Pc PoWer Dissipation	500mW/0.5W
Description & Applications	PNP Silicon epitaxial planar transistor Medium Power Transistor Features Low VCE(sat).
描述与应用	PNP硅外延平面晶体管中等功率晶体管特点低VCE（饱和）。

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