2SB1184-Q PNP transistors（BJT） -60V -3A 70MHz 120~270 -1000mV/-1V TO-252/DPAK marking B1184|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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2SB1184-Q PNP transistors（BJT） -60V -3A 70MHz 120~270 -1000mV/-1V TO-252/DPAK marking B1184

Model：2SB1184-Q
Mark / screen / code / typing：B1184
Manufacturer：
Date Code：04+rohs 05+
Package：TO-252/DPAK/SC-63/CPT3
Standard Package：2500
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	-60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	−50V
集电极连续输出电流IC Collector Current(IC)	-3A
截止频率fT Transtion Frequency(fT)	70MHz
直流电流增益hFE DC Current Gain(hFE)	120~270
管压降VCE（sat） Collector-Emitter SaturationVoltage	-1000mV/-1V
耗散功率Pc PoWer Dissipation	500mW/0.5W
Description & Applications	PNP Silicon epitaxial planar transistor Medium power Transistor Features 1) Low VCE(sat). 2) Complements the 2SD1760
描述与应用	PNP硅外延平面晶体管中等功率晶体管特点 1）低VCE（sat）的。 2）补充2SD1760

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