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2SB1184-Q PNP transistors(BJT) -60V -3A 70MHz 120~270 -1000mV/-1V TO-252/DPAK marking B1184

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
-3A
截止频率fT
Transtion Frequency(fT)
70MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1000mV/-1V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP Silicon epitaxial planar transistor Medium power Transistor Features 1) Low VCE(sat). 2) Complements the 2SD1760
描述与应用PNP硅外延平面晶体管 中等功率晶体管 特点 1)低VCE(sat)的。 2)补充2SD1760
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