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2SB1189-Q PNP transistors（BJT） -80V -700mA/-0.7A 100MHz 120~390 -400mV/-0.4V SOT-89/MPT marking BDQ high breakdown voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流IC Collector Current(IC) | -700mA/-0.7A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~390 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -400mV/-0.4V |
| 耗散功率Pc PoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Silicon epitaxial planar transistor Medium power Transistor Features 1) High breakdown voltage 2) Complements the 2SD1767 |
| 描述与应用 | PNP硅外延平面晶体管 中等功率晶体管 特点 1）高的击穿电压 2）补充2SD1767 |
