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2SB1198K PNP transistors（BJT） -80V -500mA/-0.5A 180MHz 120~270 -500mV/-0.5V SOT-23/SMT3 marking AKQ high breakdown voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 180MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~270 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP Silicon epitaxial planar transistor Low Frequency Transistor Features Low VCE(sat) High breakdown voltage. Complements to 2SD1782K. |
| 描述与应用 | PNP硅外延平面晶体管 低频晶体管 特点 低VCE（六） 高击穿电压。 补充型2SD1782K。 |
