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2SB1198K PNP transistors(BJT) -80V -500mA/-0.5A 180MHz 120~270 -500mV/-0.5V SOT-23/SMT3 marking AKQ high breakdown voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−80V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
180MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & ApplicationsPNP Silicon epitaxial planar transistor Low Frequency Transistor Features Low VCE(sat) High breakdown voltage. Complements to 2SD1782K.
描述与应用PNP硅外延平面晶体管 低频晶体管 特点 低VCE(六) 高击穿电压。 补充型2SD1782K。
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