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2SB1218-R PNP transistors(BJT) -45V -100mA/-0.1A 80MHz 210~340 -500mV/-0.5V SOT-323/SC-70 marking AR amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-45V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−45V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
210~340
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & ApplicationsPNP Silicon epitaxial planar transistor For general amplification Complementary to 2SD1819A Features High foward current transfer ratio hFE. S-Mini type package
描述与应用PNP硅外延平面晶体管 对于一般的放大 补充型2SD1819A 特点 高FOWARD电流传输比HFE。 S-迷你型封装
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