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2SB1275HRATLQ PNP transistors（BJT） -160V -1.5A 50MHz 56~180 -2V TO-252/DPAK marking B1275 high breakdown voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -160V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -160V |
| 集电极连续输出电流IC Collector Current(IC) | -1.5A |
| 截止频率fT Transtion Frequency(fT) | 50MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 56~180 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -2V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | PNP Silicon epitaxial planar transistor Power Transistor Features 1) High breakdown voltage. 2) Low collector output capacitance. 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 |
| 描述与应用 | PNP硅外延平面晶体管 功率晶体管 特点 1）高的击穿电压。 2）低集电极输出电容。 3）高转换频率（FT =50MHZ） 4）补充2SD1918 |
