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2SB1301 PNP transistors(BJT) -20V -5A 140MHz 300~600 -500mV/-0.5V SOT-89/SC-62 marking ZP high hFE

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-16V
集电极连续输出电流IC
Collector Current(IC)
-5A
截止频率fT
Transtion Frequency(fT)
140MHz
直流电流增益hFE
DC Current Gain(hFE)
300~600
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
2W
Description & ApplicationsPNP Silicon epitaxial planar transistor Features 1) Low collector-to-emitter saturation voltage 2)Large current capacity and wide ASO 3) High hFE 4) Complements to 2SD1952.
描述与应用PNP硅外延平面晶体管 特点 1)低集电极 - 发射极饱和电压 2)大电流容量,广ASO 3)高hFE 4)补充型2SD1952。
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