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2SB1308 PNP transistors（BJT） -30V -3A 120MHz 180~390 -450mV/-0.45V SOT-89/MPT marking BFR
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−20V |
| 集电极连续输出电流IC Collector Current(IC) |
-3A |
| 截止频率fT Transtion Frequency(fT) |
120MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
180~390 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage |
−450mV/-0.45V |
| 耗散功率Pc PoWer Dissipation |
500mW/0.5W |
| Description & Applications | PNP Silicon epitaxial planar transistor Power transistor Features Low saturation voltage Excellent DC current gain Complements to 2SD1963. |
| 描述与应用 | PNP硅外延平面晶体管 功率晶体管 特点 低饱和电压 优秀DC电流增益 2SD1963补充型。 |
