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2SB1661S PNP transistors（BJT） -300V -150mA/-0.15A 11MHz 50~200 -1000mV/-1V TO-252/DPAK marking B1661
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流IC Collector Current(IC) | −150mA/-0.15A |
| 截止频率fT Transtion Frequency(fT) | 11MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~200 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率Pc PoWer Dissipation | 10W |
| Description & Applications | Silicon PNP Triple Diffused Low Frequency Amplifier Features High voltage . |
| 描述与应用 | 三重扩散PNP硅晶体管 特点 高电压。 |
