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2SB789 PNP transistors(BJT) -100V -500mA/-0.5A 120MHz 90~220 -200mV/-0.2V SOT-89/SC-62 marking DQ low-frequency output amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-100V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−100V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
90~220
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−200mV/-0.2V
耗散功率Pc
PoWer Dissipation
1W
Description & ApplicationsSilicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Features High collector to emitter voltage VCEO. Large collector power dissipation PC
描述与应用硅PNP外延刨床类型 对于低频驱动放大 2SD968互补和2SD968A 特点 高集电极发射极电压VCEO。 大集电极功耗PC
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