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2SB789-R PNP transistors（BJT） -100V -500mA/-0.5A 120MHz 130~220 -200mV/-0.2V SOT-89/SC-62 marking DR low-frequency output amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -100V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −100V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 120MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 130~220 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −200mV/-0.2V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Features High collector to emitter voltage VCEO. Large collector power dissipation PC |
| 描述与应用 | 硅PNP外延刨床类型 对于低频驱动放大 2SD968互补和2SD968A 特点 高集电极发射极电压VCEO。 大集电极功耗PC |
