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2SB798 PNP transistors（BJT） -30V -1A 110MHz 135~270 -250mV/-0.25V SOT-89/SC-62 marking DL low collector saturation voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−25V |
| 集电极连续输出电流IC Collector Current(IC) |
-1A |
| 截止频率fT Transtion Frequency(fT) |
110MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
135~270 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage |
-250mV/-0.25V |
| 耗散功率Pc PoWer Dissipation |
2W |
| Description & Applications | PNP silicon epitaxial transistor power mini mold low collector saturation voltage； excellent DC current gain linearity； complementary to 2SD999 |
| 描述与应用 | PNP硅外延晶体管电源小型模具 低集电极饱和电压; 优良的直流电流增益线性度; 2SD999互补 |
