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2SB800 PNP transistors(BJT) -80V -300mA/-0.3A 100MHz 90~180 -300mV/-0.3V SOT-89/SC-62 marking FM high collector emitter voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−80V
集电极连续输出电流IC
Collector Current(IC)
−300mA/-0.3A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
90~180
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
2W
Description & Applications PNP silicon epitaxial transistor power mini mold high collector to emitter saturation voltage; complementary to 2SD1001
描述与应用 PNP硅外延晶体管 电源小型模具 高集电极到发射极饱和电压; 2SD1001互补
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