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2SB804 PNP transistors（BJT） -100V -1A 80MHz 200~400 -290mV/-0.29V SOT-89/SC-62 marking AU high collector base voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -100V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流IC Collector Current(IC) | -1A |
| 截止频率fT Transtion Frequency(fT) | 80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -290mV/-0.29V |
| 耗散功率Pc PoWer Dissipation | 2W |
| Description & Applications | PNP silicon epitaxial transistor power mini mold high collector to base voltage； excellent DC current gain linearity； complementary to 2SD1005 |
| 描述与应用 | PNP硅外延晶体管电源小型模具 高集电极基极电压; 优良的直流电流增益线性度; 2SD1005互补 |
