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2SB806 PNP transistors（BJT） -120V -700mA/-0.7A 75MHz 200~400 -400mV/-0.4V SOT-89/SC-62 marking KP high collector emitter voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-120V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-120V |
| 集电极连续输出电流IC Collector Current(IC) |
-700mA/-0.7A |
| 截止频率fT Transtion Frequency(fT) |
75MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage |
-400mV/-0.4V |
| 耗散功率Pc PoWer Dissipation |
2W |
| Description & Applications | PNP silicon epitaxial transistor power mini mold high collector to emitter complementary to 2SD1006 and 2SD1007 |
| 描述与应用 | PNP硅外延晶体管电源小型模具 高集电极到发射极电压; 互补2SD1006 2SD1007 |
