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2SB815B7 PNP transistors（BJT） -20V -700mA/-0.7A 250MHz 300~600 -60mV SOT-23/CP marking B7 large current/low saturation voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流IC Collector Current(IC) | -700mA/-0.7A |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 300~600 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -60mV |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | silicon (PNP/NPN) Epitaxial planar transistors large current capacity and low saturation voltage |
| 描述与应用 | 硅（PNP/ NPN）外延平面晶体管 大电流能力和低饱和电压 |
