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2SB908 PNP transistors（BJT） -100V -4A 2000 -1.5V TO-252/DPAK marking B908 high DC gain
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -100V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流IC Collector Current(IC) | -4A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 2000 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1.5V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | silicon PNP epitaxial type low saturation voltage； high DC current gain； complementary to 2SD1223 |
| 描述与应用 | 硅PNP外延型 低饱和电压; 高直流增益; 2SD1223互补 |
