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2SB956-Q PNP transistors（BJT） -20V -1A 200MHz 130~280 -500mV/-0.5V SOT-89/SC-62 marking HQ low-frequency poweramplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流IC Collector Current(IC) | -1A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 130~280 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Features Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat) Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 | 硅PNP外延刨床类型 对于低频功率放大 互补2SD1280 特点 大集电极功耗PC。 低集电极到发射极饱和电压VCE（SAT） |
