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2SC2223 NPN Transistors(BJT) 30V 20mA 600MHz 40~80 300mV/0.3V SOT-23/SC-59 marking F12 high-frequency amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 20mA |
| 截止频率fT Transtion Frequency(fT) | 600MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 40~80 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial planar type For high-frequency amplification Features Mirco package High gain bandwidth product Low output capacitance |
| 描述与应用 | NPN硅外延平面型 对于高频放大 特点 MIRCO包 高增益带宽积 低输出电容 |
