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2SC3082K NPN Transistors(BJT) 40V 50mA 1.1GHz 120~270 100mV/0.1V SOT-23/SC-59/SMT3 marking SQ RF amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 19V |
集电极连续输出电流IC Collector Current(IC) | 50mA |
截止频率fT Transtion Frequency(fT) | 1.1GHz |
直流电流增益hFE DC Current Gain(hFE) | 120~270 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 100mV/0.1V |
耗散功率Pc Power Dissipation | 200mW/0.2W |
Description & Applications | NPN Silicon epitaxial planer type RF amplifier Features Low noise figure High transister frequency Low collector to base time constant and high gain Excellent noise response |
描述与应用 | NPN硅外延平面型 RF放大器 特点 低噪声系数 高型晶体管频率 基本时间常数和高增益低集电极 出色的噪声响应 |