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2SC4080E-TD NPN Transistors(BJT) 200V 100mA/0.1A 400MHz 100~200 1V SOT-89/PCP marking C1 high-frequency amplifier wideband amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 200V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 200V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 400MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 1V |
| 耗散功率Pc Power Dissipation | 500mW/0.5W |
| Description & Applications | PNP/NPN Epitaxial planar Silicon transistor High-Frequency Amp Wide-Band Amp Applications High fT High breakdown voltage Small reverse transfer capacitance and excellent high-frequency characteristic Adoption of FBET process |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 高频放大器 宽带放大器应用 高FT 高击穿电压 小的反向传输电容和优良的高频特性 采纳FBET过程 |
