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2SC4100 NPN Transistors(BJT) 30V 50mA 1.1GHz 82~180 200mV/0.2V SOT-323/SC-70/UMT3 marking SP RF amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 19V |
集电极连续输出电流IC Collector Current(IC) | 50mA |
截止频率fT Transtion Frequency(fT) | 1.1GHz |
直流电流增益hFE DC Current Gain(hFE) | 82~180 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 200mV/0.2V |
耗散功率Pc Power Dissipation | 100mW/0.1W |
Description & Applications | Epitaxial planar NPN Silicon transistor RF Amplifier High transition frequency Low output capacitance Low base resistance for high gain and excellent noise response |
描述与应用 | 外延平面NPN硅晶体管 射频放大器 高转换频率 低输出电容 低基极电阻和良好的噪声响应 |