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2SC4103 NPN Transistors(BJT) 30V 30mA 1.1GHz 82~180 500mV/0.5V SOT-323/SC-70/UMT3 marking ILP
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流IC Collector Current(IC) | 30mA |
| 截止频率fT Transtion Frequency(fT) | 1.1GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 82~180 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | Epitaxial planar NPN Silicon transistor Medium Power Amp Low feedback capacitance High transition frequency High gain with low collector to base time constant |
| 描述与应用 | 外延平面NPN硅晶体管 中等功率放大器 低反馈电容 高转换频率 高增益，低集电极到基级时间常数 |
