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2SC4117-GR NPN Transistors(BJT) 120V 100mA/0.1A 100MHz 200~400 300mV/0.3V SOT-323/SC-70/USM marking DG radio general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 120V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 120V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率Pc Power Dissipation | 100mW/0.1W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS High Voltage Excellent hFE Linearity High hFE Low Noise Complementary to 2SA1587 Small Pakage |
| 描述与应用 | 东芝晶体管的硅NPN外延式（PCT的进程） 音频通用放大器应用 高电压 优秀HFE线性 高HFE 低噪声 与2SA1587互补 小型封装 |
