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2SC4132-P NPN Transistors(BJT) 120V 2A 80MHz 82~180 400mV/0.4V SOT-89/SC-62/MPT3 marking CBP power
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
120V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
120V |
| 集电极连续输出电流IC Collector Current(IC) |
2A |
| 截止频率fT Transtion Frequency(fT) |
80MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
82~180 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
400mV/0.4V |
| 耗散功率Pc Power Dissipation |
0.5W~2W |
| Description & Applications | Power Transistor High breakdown voltage Low collector output capacitance High transition frequency Complements the 2SB1236 |
| 描述与应用 | 功率晶体管 高击穿电压 低集电极输出电容 高转换频率 与2SB1236互补 |
