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2SC4539 NPN Transistors(BJT) 50V 1.2A 100MHz 120~400 500mV/0.5V SOT-89/PW-Mini marking KB power amplifier power supply switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流IC Collector Current(IC) | 1.2A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) power amplifier applications power switching applications Low Saturation Voltage High Speed Switching Time Small Flat Package Pc=1-2W |
| 描述与应用 | 东芝晶体管的硅NPN外延式（PCT的进程） 功率放大器应用 电源开关的应用 低饱和电压 高速开关时间 小型扁平封装 PC= 1-2W |
