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2SC4669 NPN Transistors(BJT) 60V 10A 50MHz 70 <300mV/0.3V TO-252/DPAK marking C4669 switchpower
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
集电极连续输出电流IC Collector Current(IC) | 10A |
截止频率fT Transtion Frequency(fT) | 50MHz |
直流电流增益hFE DC Current Gain(hFE) | 70 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | <300mV/0.3V |
耗散功率Pc Power Dissipation | 10W |
Description & Applications | Features •switching power transistor |
描述与应用 | 特点 •开关功率晶体管 |