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2SC4738-GR NPN Transistors(BJT) 60V 150mA/0.15A 80MHz 200~400 100mV/0.1V SOT-523/SSM marking LG radio general amplifier

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≤99
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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
100mW/0.1W
Description & Applications Features •TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) •Audio Frequency General Purpose Amplifier Applications •High Voltage: VCEO = 50 V •High Current: IC = 150 mA (max) •High hFE: hFE = 120 ~ 700 •Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) •Complementary to 2SA1832 •Small package
描述与应用 特点 •东芝晶体管的硅NPN外延式(PCT程序) •音频通用放大器应用 •高电压:VCEO= 50 V •高电流:IC=150 mA(最大) •高HFE:HFE=120〜700 •优秀的HFE线性:HFE(IC= 0.1毫安)/ HFE(IC= 2毫安)=0.95(典型值) •互补2SA1832 •小型封装
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