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2SC4841 NPN Transistors(BJT) 20V 15mA 10Ghz 50~250 SOT-523/ESM marking MO

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
10V
集电极连续输出电流IC
Collector Current(IC)
15mA
截止频率fT
Transtion Frequency(fT)
10Ghz
直流电流增益hFE
DC Current Gain(hFE)
50~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
100mW/0.1W
Description & ApplicationsFeatures •Silicon NPN epitaxial planar type •Low noise figure High gain •NF=1.8db |S21e|*2=8.5db Amplication •VHL ~ UHF band low noise amplifier application
描述与应用特点 •NPN硅外延平面型 •低噪声系数高增益 •NF=1.8分贝| S21E| *2的=8.5分贝扩增 •VHL〜UHF频段低噪声放大器的应用
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