Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SC4841 NPN Transistors(BJT) 20V 15mA 10Ghz 50~250 SOT-523/ESM marking MO
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流IC Collector Current(IC) | 15mA |
| 截止频率fT Transtion Frequency(fT) | 10Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 100mW/0.1W |
| Description & Applications | Features •Silicon NPN epitaxial planar type •Low noise figure High gain •NF=1.8db |S21e|*2=8.5db Amplication •VHL ~ UHF band low noise amplifier application |
| 描述与应用 | 特点 •NPN硅外延平面型 •低噪声系数高增益 •NF=1.8分贝| S21E| *2的=8.5分贝扩增 •VHL〜UHF频段低噪声放大器的应用 |
