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2SC4853-4-TL-E NPN Transistors(BJT) 12V 15mA 5GHz 90~180 SOT-523/SMCP marking CN4 low voltage lowcurrent high-frequency amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 12V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流IC Collector Current(IC) | 15mA |
| 截止频率fT Transtion Frequency(fT) | 5GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 90~180 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 80mW |
| Description & Applications | Features •SANYO Semiconductors •NPN Epitaxial Planar Silicon Transistor •Low-Voltage, Low-Current High-Frequency Amplifier Applications • Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) :⏐S21e⏐2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). |
| 描述与应用 | 特点 •三洋半导体 •NPN平面外延硅晶体管 •低电压，低电流的高频放大器的应用 •低电压，低电流操作：FT =5GHz的典型。 （VCE=1V，IC=1毫安）：⏐S21E⏐2=7分贝典型值（F =1GHz的）。 ：NF=2.6分贝典型值（F=1GHz的）。 |
