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2SC4853-4-TL-E NPN Transistors(BJT) 12V 15mA 5GHz 90~180 SOT-523/SMCP marking CN4 low voltage lowcurrent high-frequency amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
12V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
6V
集电极连续输出电流IC
Collector Current(IC)
15mA
截止频率fT
Transtion Frequency(fT)
5GHz
直流电流增益hFE
DC Current Gain(hFE)
90~180
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
80mW
Description & ApplicationsFeatures •SANYO Semiconductors •NPN Epitaxial Planar Silicon Transistor •Low-Voltage, Low-Current High-Frequency Amplifier Applications • Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) :⏐S21e⏐2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz).
描述与应用特点 •三洋半导体 •NPN平面外延硅晶体管 •低电压,低电流的高频放大器的应用 •低电压,低电流操作:FT =5GHz的典型。 (VCE=1V,IC=1毫安):⏐S21E⏐2=7分贝典型值(F =1GHz的)。 :NF=2.6分贝典型值(F=1GHz的)。
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