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2SC4869 NPN Transistors(BJT) 16V 50mA 9Ghz 135~270 SOT-143/CP4 marking GN5
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
16V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
8V |
| 集电极连续输出电流IC Collector Current(IC) |
50mA |
| 截止频率fT Transtion Frequency(fT) |
9Ghz |
| 直流电流增益hFE DC Current Gain(hFE) |
135~270 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc Power Dissipation |
200mW/0.2W |
| Description & Applications | Features •NPN Epitaxial planar silicon transistor •Low noise : NF=1.2dB typ (f=1GHz). •High gain : S21e2=15dB typ (f=1GHz). •High cutoff frequency : fT=9.0GHz typ. |
| 描述与应用 | 特点 •NPN外延平面硅晶体管 •低噪音：NF=1.2分贝典型值（F =1GHz的）。 •高增益：S21E2=15分贝典型值（F =1GHz的）。 •高截止频率：：FT =9.0GHZ典型。 |
