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2SC5006 NPN Transistors(BJT) 20V 100mA/0.1A 4.5Ghz 80~160 3V SOT-523 marking 23

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
12V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
4.5Ghz
直流电流增益hFE
DC Current Gain(hFE)
80~160
管压降VCE(sat)
Collector-Emitter Saturation Voltage
3V
耗散功率Pc
Power Dissipation
125mW/0.125W
Description & ApplicationsFeatures • SILICON TRANSISTOR • NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD • Low Voltage Use. • High fT :4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) • Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC =7 mA, f = 1 GHz) • Ultra Super Mini Mold Package.
描述与应用特点 •硅晶体管 •NPN硅外延型晶体管3针超超迷你模具•低电压使用。 •高FT:4.5 GHz的TYP。 (@ VCE= 3 V,IC=7 mA时,F= 1千兆赫) •低CRE:0.7 PF TYP。 (@ VCE=3 V,IE= 0时,F =1兆赫) •低噪声系数:1.2 dB典型值。 (IC= 3毫安,@ VCE= 7 V,F =1吉赫) •高| S21E|2:TYP9分贝。 (@ VCE= 3 V,IC=7 mA时,F= 1千兆赫) •超超级迷你模具包装。
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