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2SC5274 NPN Transistors(BJT) 150V 50mA 120MHz 56~120 <500mV/0.5V SOT-523/SC75A/EMT3 marking BVN high voltage amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 150V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 150V |
| 集电极连续输出电流IC Collector Current(IC) | 50mA |
| 截止频率fT Transtion Frequency(fT) | 120MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 56~120 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | <500mV/0.5V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | high voltage amplifier transistor ■ Features • High breakdown voltage （BVceo=150V） • Low collector output capacitance,typically 2pF at Vcb=12V |
| 描述与应用 | 高电压放大器晶体管 ■特点 •高击穿电压（击穿=150V） •低集电极输出电容，通常2pF的VCB =12V |
