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2SC5317FT NPN Transistors(BJT) 8V 20mA >9GHz 50~250 SOT-623/TESM marking MT VHL-UFL band low noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 8V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 5V |
| 集电极连续输出电流IC Collector Current(IC) | 20mA |
| 截止频率fT Transtion Frequency(fT) | >9GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 100mW/0.1W |
| Description & Applications | NPN EPITAXIAL SILICON planar TRANSISTOR vhl ~ufl band low noise amplify application * low noise figure * high gain |
| 描述与应用 | NPN外延硅平面晶体管 VHL〜UFL波段低噪声放大应用 *低噪声系数 *高增益 |
